GES2483

GES2483

SKU: GES2483
GES2483 Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 360m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 3.6m
hfe 175
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 175
SKU 711615
Back