GES2904

GES2904

SKU: GES2904
GES2904 Transistor Silicon PNP CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES2904A
Type Transistor Silicon PNP
Case TO236
Manufacturer General Electric
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 600m
Derate (Amb) (W/°C) 3.4m
hfe 40
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 140
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1279391
Back