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GES2906R
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GES2906R

SKU: GES2906R
GES2906R Transistor Silicon PNP CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES2906
Type Transistor Silicon PNP
Case TO236
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 360m
C(ob) (F) 3.0p
Derate (Amb) (W/°C) 3.6m
hfe 40
Ic Max. (A) 350m
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
Trans. Freq (Hz) Min. 225M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 140
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1431874
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