GES2907

SKU: GES2907

GES2907 Transistor Silicon PNP CASE: TO236 MAKE: General Electric

Product specifications

Weight	0.01 kg
Equivalent	GES2907R
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	General Electric
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	360m
Derate (Amb) (W/°C)	3.6m
hfe	100
Ic Max. (A)	350m
Icbo Max. @Vcb Max. (A)	50n
Polarity	PNP
Trans. Freq (Hz) Min.	225M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	140
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	711613

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