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GES2907A
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GES2907A

SKU: GES2907A
GES2907A Transistor Silicon PNP CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES2907AR
Type Transistor Silicon PNP
Case TO236
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 360m
Derate (Amb) (W/°C) 3.6m
hfe 100
Ic Max. (A) 350m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 225M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 140
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 1279682
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