GES3053

SKU: GES3053

GES3053 Transistor Silicon NPN CASE: TO236 MAKE: General Electric

Product specifications

Weight	0.01 kg
Equivalent	GES3053A
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	General Electric
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	625m
C(ob) (F)	15p
Derate (Amb) (W/°C)	5.0m
hfe	50
Ic Max. (A)	700m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	15 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	1250372

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