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GES3565
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GES3565

SKU: GES3565
GES3565 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 360m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 2.8m
hfe 150
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 90M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 1249591
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