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GES3567
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GES3567

SKU: GES3567
GES3567 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Vbr CBO 80
Vbr CEO 40
Max. PD (W) 625m
C(ob) (F) 20p
Derate (Amb) (W/°C) 5.0m
hfe 40
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 80M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1250362
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