GES3569

SKU: GES3569

GES3569 Transistor Silicon NPN CASE: TO236 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	General Electric
Vbr CBO	80
Vbr CEO	40
Max. PD (W)	625m
C(ob) (F)	20p
Derate (Amb) (W/°C)	5.0m
hfe	100
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	50n
Polarity	NPN
Trans. Freq (Hz) Min.	80M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	1250412

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