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GES4122
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GES4122

SKU: GES4122
GES4122 Transistor Silicon PNP CASE: TO236 MAKE: General Electric
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer General Electric
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 200m
C(ob) (F) 4.5p
Derate (Amb) (W/°C) 2.0m
hfe 150
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 25n
Polarity PNP
Trans. Freq (Hz) Min. 400M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 140
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 1279498
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