GES4248

SKU: GES4248

GES4248 Transistor Silicon PNP CASE: TO236 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	General Electric
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	400m
C(ob) (F)	6.0p
Derate (Amb) (W/°C)	4.0m
hfe	50
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	10n
Polarity	PNP
Trans. Freq (Hz) Min.	40M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	150
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	6 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	1247850

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