GES5127
View detailed images (1)

GES5127

SKU: GES5127
GES5127 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 1431989
Back