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GES5305
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GES5305

SKU: GES5305
GES5305 Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CEO 25
Max. PD (W) 400m
Max. hFE 20k
Min hFE 2.0k
Ic Max. (A) 300m
@Ic (test) (A) 2.0m
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 7.0
Derate Above 25°C 9.0m
Trans. Freq (Hz) Min. 50M
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 711612
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