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GES5306
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GES5306

SKU: GES5306
GES5306 Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Equivalent GES5306A
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CEO 25
Max. PD (W) 400m
Max. hFE 70k
Min hFE 7.0k
Ic Max. (A) 300m
@Ic (test) (A) 2.0m
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 7.0
Derate Above 25°C 9.0m
Trans. Freq (Hz) Min. 50M
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 7000
SKU 711611
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