GES5307

SKU: GES5307

GES5307 Transistor Silicon NPN CASE: TO92 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	General Electric
Vbr CEO	40
Max. PD (W)	400m
Max. hFE	20k
Min hFE	2.0k
Ic Max. (A)	300m
@Ic (test) (A)	2.0m
Icbo Max. @Vcb Max. (A)	100n
Mat.	Silicon Logic
Polarity	NPN
R(sat) (Û)	7.0
Derate Above 25°C	9.0m
Trans. Freq (Hz) Min.	50M
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	25 MHz
Forward Current Transfer Ratio (hFE), MIN	5000
SKU	711609

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