The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GES5308A
View detailed images (12)

GES5308A

SKU: GES5308A
GES5308A Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Equivalent GES5308
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CEO 40
Max. PD (W) 400m
Max. hFE 70k
Min hFE 7.0k
Ic Max. (A) 300m
@Ic (test) (A) 2.0m
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 7.0
Derate Above 25°C 9.0m
Trans. Freq (Hz) Min. 50M
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 7000
SKU 711607
Back