| Type | Transistor Silicon NPN | |
| Case | TO92 | |
| Manufacturer | General Electric | |
| Vbr CBO | 60 | |
| Vbr CEO | 30 | |
| Max. PD (W) | 360m | |
| C(ob) (F) | 8.0p | |
| Derate (Amb) (W/°C) | 2.8m | |
| t(f) Max. (S) | 350n+ | |
| hfe | 100 | |
| Ic Max. (A) | 500m | |
| Icbo Max. @Vcb Max. (A) | 50n | |
| Polarity | NPN | |
| Tr Max. (s) | 40n | |
| Trans. Freq (Hz) Min. | 250M | |
| @VCE (test) (V) | 10 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 150m | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.36 W | |
| Maximum Collector-Emitter Voltage |Vce| | 30 V | |
| Maximum Collector Current |Ic max| | 0.5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 7 pF | |
| Transition Frequency (ft): | 100 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 100 | |
| SKU | 711605 | |