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GES5401
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GES5401

SKU: GES5401
GES5401 Transistor Silicon PNP CASE: SOT23 MAKE: General Electric
Product specifications
Equivalent GES5401R
Type Transistor Silicon PNP
Case SOT23
Manufacturer General Electric
Vbr CBO 160
Vbr CEO 150
Max. PD (W) 350m
Derate (Amb) (W/°C) 8.0m
Max. hFE 240
Min hFE 60
Ic Max. (A) 600m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 1267425
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