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GES5449
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GES5449

SKU: GES5449
GES5449 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Vbr CBO 50
Vbr CEO 30
Max. PD (W) 360m
Derate (Amb) (W/°C) 2.8m
hfe 100
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 711596
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