GES5550
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GES5550

SKU: GES5550
GES5550 Transistor Silicon NPN CASE: SOT23 MAKE: General Electric
Product specifications
Equivalent GES5550R
Type Transistor Silicon NPN
Case SOT23
Manufacturer General Electric
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 1432010
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