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GES5551
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GES5551

SKU: GES5551
GES5551 Transistor Silicon NPN CASE: SOT23 MAKE: General Electric
Product specifications
Equivalent GES5551R
Type Transistor Silicon NPN
Case SOT23
Manufacturer General Electric
Vbr CBO 180
Vbr CEO 160
Max. PD (W) 350m
Max. hFE 250
Min hFE 80
Ic Max. (A) 600m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Derate Above 25°C 8.0n
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 1269962
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