The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GES5811
View detailed images (12)

GES5811

SKU: GES5811
GES5811 Transistor Silicon PNP CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer General Electric
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 500m
Derate (Amb) (W/°C) 4.5m
hfe 60
Ic Max. (A) 750m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 125M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.75 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 16 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 711592
Back