GES5812

SKU: GES5812

GES5812 Transistor Silicon NPN CASE: TO92 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	General Electric
Vbr CBO	35
Vbr CEO	25
Max. PD (W)	500m
Derate (Amb) (W/°C)	4.5m
hfe	150
Ic Max. (A)	750m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Collector Current \|Ic max\|	0.75 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	12 pF
Transition Frequency (ft):	75 MHz
Forward Current Transfer Ratio (hFE), MIN	150
SKU	711591

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