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GES5813
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GES5813

SKU: GES5813
GES5813 Transistor Silicon PNP CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer General Electric
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 500m
Derate (Amb) (W/°C) 4.5m
hfe 150
Ic Max. (A) 750m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.75 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 711590
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