GES5817

SKU: GES5817

GES5817 Transistor Silicon PNP CASE: TO92 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	General Electric
Vbr CBO	50
Vbr CEO	40
Max. PD (W)	500m
Derate (Amb) (W/°C)	4.5m
hfe	100
Ic Max. (A)	750m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Collector Current \|Ic max\|	0.75 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	16 pF
Transition Frequency (ft):	75 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	711586

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