GES5827A

SKU: GES5827A

GES5827A Transistor Silicon NPN CASE: TO92 MAKE: General Electric

Product specifications

Weight	0.01 kg
Equivalent	GES5827
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	General Electric
Vbr CBO	50
Vbr CEO	40
Max. PD (W)	360m
C(ob) (F)	4.0p
Derate (Amb) (W/°C)	3.6m
hfe	250
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	50n
Polarity	NPN
Trans. Freq (Hz) Min.	90M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	250
SKU	711575

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