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GES6001
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GES6001

SKU: GES6001
GES6001 Transistor Silicon PNP CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer General Electric
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 400m
Derate (Amb) (W/°C) 4.0m
hfe 100
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Trans. Freq (Hz) Min. 225M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 140
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 16 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 711571
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