The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GES6220

GES6220

SKU: GES6220
GES6220 Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 500m
Derate (Amb) (W/°C) 4.0m
hfe 20
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 20m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 711554
Back