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GES6562
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GES6562

SKU: GES6562
GES6562 Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 625m
C(ob) (F) 30p
Derate (Amb) (W/°C) 5.0m
hfe 50
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 60M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.625 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 1247171
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