GES930

SKU: GES930

GES930 Transistor Silicon NPN CASE: TO236 MAKE: General Electric

Product specifications

Weight	0.01 kg
Equivalent	GES930R
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	General Electric
Vbr CBO	70
Vbr CEO	50
Max. PD (W)	360m
Derate (Amb) (W/°C)	3.6m
hfe	100
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	10n
Polarity	NPN
Trans. Freq (Hz) Min.	90M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	150
@Ic (A)	10u
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	45 V
Maximum Collector-Emitter Voltage \|Vce\|	45 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	6 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	711549

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