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GME2002
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GME2002

SKU: GME2002
GME2002 Transistor Silicon NPN CASE: TO106 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Philips
Vbr CBO 35
Vbr CEO 20
Max. PD (W) 250m
C(ob) (F) 5p
Derate (Amb) (W/°C) 2.5m
hfe 100
Icbo Max. @Vcb Max. (A) .05u
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 561515
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