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GME3002
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GME3002

SKU: GME3002
GME3002 Transistor Silicon NPN CASE: TO106 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Philips
Vbr CBO 30
Vbr CEO 12
Max. PD (W) 250m
C(ob) (F) 3p
Derate (Amb) (W/°C) 2.5m
hfe 20
Icbo Max. @Vcb Max. (A) .05u
Polarity NPN
Trans. Freq (Hz) Min. 900M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 8.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 561517
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