The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GME4001
View detailed images (12)

GME4001

SKU: GME4001
GME4001 Transistor Silicon NPN CASE: TO106 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Philips
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 250m
C(ob) (F) 3p
Derate (Amb) (W/°C) 2.0m
hfe 60
Icbo Max. @Vcb Max. (A) .05u
Polarity NPN
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 10 V
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 561518
Back