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GME6001
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GME6001

SKU: GME6001
GME6001 Transistor Silicon NPN CASE: TO106 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Philips
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 360m
C(ob) (F) 10p
Derate (Amb) (W/°C) 3.6m
hfe 30
Icbo Max. @Vcb Max. (A) .05u
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 561521
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