GME6003

SKU: GME6003

GME6003 Transistor Silicon NPN CASE: TO106 MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO106
Manufacturer	Philips
Vbr CBO	25
Vbr CEO	25
Max. PD (W)	360m
C(ob) (F)	12p
Derate (Amb) (W/°C)	3.6m
hfe	30
Icbo Max. @Vcb Max. (A)	.10u
Polarity	NPN
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	125
@Ic (A)	50m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	12 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	561523

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