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GME9001
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GME9001

SKU: GME9001
GME9001 Transistor Silicon NPN CASE: TO106 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Philips
Vbr CBO 40
Vbr CEO 15
Max. PD (W) 250m
C(ob) (F) 4p
Derate (Amb) (W/°C) 2.5m
t(f) Max. (S) 13n-+
hfe 40
Icbo Max. @Vcb Max. (A) .50u
Polarity NPN
Tr Max. (s) 9.0n-
Trans. Freq (Hz) Min. 400M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 561524
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