GME9002

SKU: GME9002

GME9002 Transistor Silicon NPN CASE: TO106 MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO106
Manufacturer	Philips
Vbr CBO	30
Vbr CEO	12
Max. PD (W)	250m
C(ob) (F)	4p
Derate (Amb) (W/°C)	2.5m
t(f) Max. (S)	15n-+
hfe	30
Icbo Max. @Vcb Max. (A)	.50u
Polarity	NPN
Tr Max. (s)	9.0n-
Trans. Freq (Hz) Min.	400M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	125
@Ic (A)	10m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	12 V
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	400 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	561525

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