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GME9022
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GME9022

SKU: GME9022
GME9022 Transistor Silicon NPN CASE: TO106 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Philips
Vbr CBO 25
Vbr CEO 12
Max. PD (W) 250m
C(ob) (F) 6p
Derate (Amb) (W/°C) 2.5m
t(f) Max. (S) 70n+
hfe 30
Icbo Max. @Vcb Max. (A) .50u
Polarity NPN
Tr Max. (s) 50n
Trans. Freq (Hz) Min. 300M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 561527
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