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GS2012
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GS2012

SKU: GS2012
GS2012 Transistor Silicon NPN CASE: TO202 MAKE: GST
Product specifications
Type Transistor Silicon NPN
Case TO202
Manufacturer GST
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 10
Max. hFE 240
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 140 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1270581
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