GS2013

SKU: GS2013

GS2013 Transistor Silicon NPN CASE: TO220 MAKE: GST

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	GST
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	30
Max. hFE	300
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	240m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	140 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	1271287

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