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GSDB10008
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GSDB10008

SKU: GSDB10008
GSDB10008 SemiConductor - CASE: TO5 MAKE: General Semiconductor
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer General Semiconductor
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 15
Max. hFE 160
Min hFE 40
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 600n
R(sat) (Û) 120m
Derate Above 25°C 149m
Trans. Freq (Hz) Min. 5.0M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 541031
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