GSDR10025

SKU: GSDR10025

GSDR10025 Transistor Silicon NPN CASE: TO3 MAKE: SQDG

Product specifications

Weight	0.01 kg
Equivalent	GSDR10025I
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	SQDG
Vbr CBO	300
Vbr CEO	250
Max. PD (W)	80
t(f) Max. (S)	300n
Min hFE	10
Ic Max. (A)	15
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Tr Max. (s)	150n
R(sat) (Û)	60m
Derate Above 25°C	800m
Trans. Freq (Hz) Min.	25M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	25 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	1274451

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