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GSDR15020I
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GSDR15020I

SKU: GSDR15020I
GSDR15020I Transistor Silicon NPN CASE: TO3 MAKE: SQDG
Product specifications
Equivalent GSDR15020
Type Transistor Silicon NPN
Case TO3
Manufacturer SQDG
Vbr CBO 250
Vbr CEO 200
Max. PD (W) 100
t(f) Max. (S) 300n
Min hFE 10
Ic Max. (A) 20
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Tr Max. (s) 150n
R(sat) (Û) 53m
Derate Above 25°C 800m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 1274945
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