The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GSDR15025I
View detailed images (13)

GSDR15025I

SKU: GSDR15025I
GSDR15025I Transistor Silicon NPN CASE: TO3 MAKE: SQDG
Product specifications
Equivalent GSDR15025
Type Transistor Silicon NPN
Case TO3
Manufacturer SQDG
Vbr CBO 300
Vbr CEO 250
Max. PD (W) 100
t(f) Max. (S) 300n
Min hFE 10
Ic Max. (A) 20
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Tr Max. (s) 150n
R(sat) (Û) 53m
Derate Above 25°C 800m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 1274984
Back