GSDS50020

SKU: GSDS50020

GSDS50020 Transistor Silicon NPN CASE: TO3 MAKE: General Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	General Semiconductor
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	100
t(f) Max. (S)	175n
Min hFE	8.0
Ic Max. (A)	50
@Ic (test) (A)	50
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
Tr Max. (s)	200n
R(sat) (Û)	20m
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	30M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Collector Current \|Ic max\|	50 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	8
SKU	541032

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