The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GT125B
View detailed images (1)

GT125B

SKU: GT125B
GT125B Transistor Germanium PNP CASE: Standard MAKE: USSR
Product specifications
Type Transistor Germanium PNP
Case Standard
Manufacturer USSR
Vbr CBO 35
Max. PD (W) 150m
Derate (Amb) (W/°C) 3.0m
hfe 45
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 5.0i
Oper. Temp (°C) Max. 60
@Ic (A) 25m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 1246649
Back