GT125E

SKU: GT125E

GT125E Transistor Germanium PNP CASE: Standard MAKE: USSR

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	Standard
Manufacturer	USSR
Vbr CBO	35
Max. PD (W)	150m
Derate (Amb) (W/°C)	3.0m
hfe	45
Ic Max. (A)	300m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	1.0M
@VCE (test) (V)	.50i
Oper. Temp (°C) Max.	60
@Ic (A)	100m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	90 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	45
SKU	1246651

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