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GT200
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GT200

SKU: GT200
GT200 Transistor Silicon NPN CASE: TO220 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Generic
Vbr CBO 80
Vbr CEO 80
Vbr DSS 45
Max. PD (W) 12
@Freq. (test) 600M
Max. hFE 150
Min hFE 30
Ic Max. (A) 2.0
@I(D) (A) 50m
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Id Max. (A) 200m
Mat. Silicon Logic
Noise Fig. 4.0
Oper. Gain Typ (S21) 10
f(osc) Max. (Hz) 500M
Polarity NPN
S11 Deg. (Typ) -99
S11 Mag Typ. -2.0
S22 Deg. Typ. -38
S22 Mag Typ. -4.4
R(sat) (Û) 500m
Derate Above 25°C 96m
Trans. Freq (Hz) Min. 150M
@Freq. (test) 300M
@V(DS) (V) 12
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 1282638
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