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GT600
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GT600

SKU: GT600
GT600 Transistor Silicon NPN CASE: TO3 MAKE: General Diode Corporation
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer General Diode Corporation
Vbr CBO 85
Vbr CEO 80
Max. PD (W) 250
Max. hFE 60
Min hFE 30
Ic Max. (A) 60
@Ic (test) (A) 20
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 50m
Derate Above 25°C 1.4
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 250 W
Maximum Collector-Base Voltage |Vcb| 85 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 60 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 540512
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