| Type | Transistor Silicon PNP | |
| Case | Standard | |
| Manufacturer | General Diode Corporation | |
| Vbr CBO | 80 | |
| Max. PD (W) | 1.0 | |
| Min hFE | 60- | |
| @Ic (test) (A) | 5.0m | |
| Icbo Max. @Vcb Max. (A) | 2.0u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 1.0M | |
| Oper. Temp (°C) Max. | 125 | |
| @VCE (V) | 10i | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 1 W | |
| Maximum Collector-Base Voltage |Vcb| | 80 V | |
| Max. Operating Junction Temperature (Tj) | 140 °C | |
| Transition Frequency (ft): | 1 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 1269470 | |